The TLP290-4 consists of photo transistor, optically coupled to a gallium arsenide infrared emitting diode. TLP290-4 is housed in the SO16 package, very small and thin coupler. Since TLP290-4 are guaranteed wide operating temperature (Ta=-55 to 110 ?C), it?s suitable for high-density surface mounting applications such as programmable controllers and hybrid ICs.

Specifications and Features:

1. Collector-Emitter Voltage : 80 V (min)
2. Current Transfer Ratio : 50% (min) Rank GB : 100% (min)
3. Isolation Voltage : 2500 Vrms (min)
4. Guaranteed performance over -55 to 110 ?C
5. UL (under preparation) : UL1577 , File No. E67349
6. ?cUL (under preparation) : CSA Component Acceptance Service No.5A