The H11FXM series consists of a Gallium-Aluminum-Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photo-detector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion-free control of low-level AC and DC analog signals. The H11FXM series devices are mounted in dual in-line packages.

Applications:

1. Consumer Appliances
2. Industrial Motor

Features:

As a remote variable resistor:

? 100? to ? 300M?

? 15pF shunt capacitance

? 100G? I/O isolation resistance as an analog switch:

Extremely low offset voltage

60 Vpk-pk signal capability

No charge injection or latch-up

UL recognized (File #E90700)