The IRF540N (TO-220-3) MOSFET from International Rectifier is 100V single N channel HEXFET power MOSFET in TO-220AB package. This MOSFET features extremely low on-resistance per silicon area, dynamic dv/dt rating, rugged, fast switching and fully avalanche rated as a result, power MOSFET is well known to provide extremely efficiency and reliability which can be used in wide variety of applications.

Features:

• Drain to source voltage Vds is 100V
• Gate to source voltage is ±20V
• On Resistance Rds(on) of 44mohm at Vgs of 10V
• Power dissipation Pd of 130W at 25°C
• Continuous drain current Id of 33A at Vgs 10V and 25°C
• Operating junction temperature range from -55°C to 175°C

Applications:

• Power Management
• Industrial
• Portable Devices
• Consumer Electronics