38N30 MOSFET - FQA38N30 300V 38.4A N-Channel Power MOSFET TO-3 Package

38N30 N-Channel enhancement mode power field effect transistors. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply, power factor correction, electronic lamp ballast based on half bridge

Specifications of 38N30 MOSFET - FQA38N30 300V 38.4A N-Channel Power MOSFET TO-3 Package :

1. Drain-Source Breakdown Voltage min : 300V
2. Gate-Source Threshold Voltage min : 2.0V
3. Gate-Source Threshold Voltage max : 4.0V
4. Gate-Source Leakage max : +100nA
5. Drain-Source On-State Resistance : 85mΩ