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The TIP31 is a standard type of NPN bipolar junction transistor used for medium power applications. TIP31 transistors are designated as TIP31A, TIP31B, and TIP31 to indicate increasing collector-base and collector-emitter breakdown voltage ratings. The TIP31 is packaged in a TO-220 case.Features of ..

The TIP127 is a PNP Epitaxial Darlington Transistor. Mainly used for Medium Power Linear Switching Applications and Complements to TIP120/121/122.Features of TIP 127Collector-Emitter Volt (Vceo): 100V.Collector-Base Volt (Vcbo): 100V.Collector Current (Ic): 5.0A.hfe: 1,000 @ 500mA.Power Dissipation ..

2SB698 PNP General Purpose Transistor is designed for the 1w audio output applications.FeaturesCollector-Emitter Volt (Vceo): 20VCollector-Base Volt (Vcbo): 25VCollector Current (Ic): 0.7Ahfe: 60-560 @ 50mAPower Dissipation (Ptot): 600mWCurrent-Gain-Bandwidth (ftotal): 250MHzType: PNP..

The 2SB560 is epitaxial planar transistors for complementary push-pull pair having high reverse voltage and low saturation voltage, and suitable universal AF power amplifier useFeaturesCollector-Emitter Volt (Vceo): 80VCollector-Base Volt (Vcbo): 100VCollector Current (Ic): 1.0Ahfe: 60-560 @ 50mAPow..

2SA1207 PNP General Purpose Transistor is designed for the High-Voltage Switching, AF 60W Pre driver applications. 2SA1207 is complementary to 2SC2909.FeaturesCollector-Emitter Volt (Vceo): 160VCollector-Base Volt (Vcbo): 180VCollector Current (Ic): 0.07Ahfe: 100-400 @ 10mAPower Dissipation (Ptot): ..

2SA1175 PNP General Purpose Transistor is designed for the driver stage of AF amplifier applications. 2SA1175 is complementary to 2SC2785.FeaturesCollector-Emitter Volt (Vceo): 50VCollector-Base Volt (Vcbo): 60VCollector Current (Ic): 0.1Ahfe: 110-600 @ 1mAPower Dissipation (Ptot): 250mWCurrent-Gain..

2SA1123 PNP General Purpose Transistor is designed for low-frequency high breakdown voltage amplification applications. 2SA1123 complementary to 2SC2631.FeaturesCollector-Emitter Volt (Vceo): 150VCollector-Base Volt (Vcbo): 150VCollector Current (Ic): 0.05Ahfe: 130-450 @ 10mAPower Dissipation (Ptot)..

2SA1084 PNP Low Noise Transistor is designed for Low-frequency low noise amplifier applications. 2SA1084 is complementary to 2SC2545.FeaturesCollector-Emitter Volt (Vceo): -90VCollector-Base Volt (Vcbo): -90VCollector Current (Ic): -0.1Ahfe: 250-800 @ 2mAPower Dissipation (Ptot): 400mWCurrent-Gain-B..

2SA1082 PNP General Purpose Transistor is designed for Low-frequency amplifier applications. 2SA1082 is complementary to 2SC2396.FeaturesCollector-Emitter Volt (Vceo): 120VCollector-Base Volt (Vcbo): 120VCollector Current (Ic): 0.1Ahfe: 250-800 @ 2mAPower Dissipation (Ptot): 400mWCurrent-Gain-Bandwi..

2SA1015 PNP General Purpose Transistor is designed for the driver stage amplifier applications. 2SA1015 is complementary to 2SC1815.FeaturesCollector-Emitter Volt (Vceo): 50VCollector-Base Volt (Vcbo): 50VCollector Current (Ic): 0.15Ahfe: 70-400 @ 2mAPower Dissipation (Ptot): 400mWCurrent-Gain-Bandw..

The 2SA1013 is a PNP epitaxial silicon transistor, it uses UTC’s advanced technology to provide the customers with high DC current gain, etc. The 2SA1013 is suitable for power switching and color TV vertical deflection output, etcFeaturesHigh BVCEOHigh DC current gainLarge continuous collector curre..

2N6426 NPN Darlington Transistor is designed for applications requiring extremely high current gain at currents to 1.0 AFeaturesCollector-Emitter Volt (Vceo): 40VCollector-Base Volt (Vcbo): 40VCollector Current (Ic): 0.5Ahfe: 30,000-300,000 @ 100mAPower Dissipation (Ptot): 625mWType: NPN..

The 2N4036 is a PNP Silicon Transistor designed primarily for amplifier and switching applications. This device features high breakdown voltage, low leakage current, low capacity and beta useful over an extremely wide current range.2N4036 Key FeaturesCollector-Emitter Volt (Vceo): 65VCollector-Base ..

The 2N4032 is a PNP silicon Bipolar Transistor designed primarily for amplifier and switching applications. The device features high breakdown voltage, low leakage current, low capacity and beta useful over an extremely wide current range.FeaturesCollector-Emitter Volt (Vceo): 60VCollector-Base Volt..

The 2N3706 is an NPN (Negative-Positive-Negative) general-purpose transistor that is commonly available in a pack of five. Transistors are electronic devices used to amplify or switch electronic signals, and the 2N3706 is specifically designed for general-purpose applications.FeaturesCollector-Emitt..

This is a Darlington pair transistor inbuilt in one transistor package. This device is designed for applications requiring extremely high current gain at currents to 1.0A.Features of BC517 NPN Darlington Transistor:VCEO Collector-Emitter Voltage 30 V.VCBO Collector-Base Voltage 40 V.VEBO Emitter-Bas..

This 2N 2369 is a NPN type switching transistor used in different switching the devices.Features of 2N 2369 NPN Transistor:VCBO (collector-base voltage open emitter): 40 V.VCEO (collector-emitter voltage open base): 15 V.IC collector current (DC) : 200 mA.Ptot total power dissipation at Tamb ≤ 25 °C..

The IRF3205 MOSFET from International Rectifier is 100V single N channel HEXFET power MOSFET in the TO-220AB package. This MOSFET features extremely low on-resistance per silicon area, dynamic dv/dt rating, rugged, fast switching and fully avalanche rated as a result, power MOSFET is well known to p..

The IRF540N (TO-220-3) MOSFET from International Rectifier is 100V single N channel HEXFET power MOSFET in TO-220AB package. This MOSFET features extremely low on-resistance per silicon area, dynamic dv/dt rating, rugged, fast switching and fully avalanche rated as a result, power MOSFET is well kno..