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Description:P55NF06 power MOSFETs have been developed using STMicroelectronics’ unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the devices suitable for use as primary switches in advanced high-efficiency isolated DCDC converters fo..

The IRF3205 MOSFET from International Rectifier is 100V single N channel HEXFET power MOSFET in the TO-220AB package. This MOSFET features extremely low on-resistance per silicon area, dynamic dv/dt rating, rugged, fast switching and fully avalanche rated as a result, power MOSFET is well known to p..

The IRF540N (TO-220-3) MOSFET from International Rectifier is 100V single N channel HEXFET power MOSFET in TO-220AB package. This MOSFET features extremely low on-resistance per silicon area, dynamic dv/dt rating, rugged, fast switching and fully avalanche rated as a result, power MOSFET is well kno..

These are P-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation.Features of AV P Channel MOSFET (IRF 9530):Type: P channel.Vdss= -1..