2N Series Transistors

The zener diode is a sharply break down voltage diode which allows current to flow in the forward direction in the same manner as an ideal diode, but also permits it to flow in the reverse direction when the voltage is above a certain value known as the breakdown voltage.Features of 2N3391 NPN Gener..

The transistor is a 3 terminal & 2 junction semiconductor device which is used for switching or amplifying purposes.Features of 2N3251A PNP General Purpose Transistor:Collector-Emitter Volt (Vceo): 60V.Collector-Base Volt (Vcbo): 60V.Collector Current (Ic): 0.2A.hfe: 100-300 at 10mA.Power Dissip..

The transistor is a 3 terminal & 2 junction semiconductor device which is used for switching or amplifying purposes.Features of 2N2907 PNP General Purpose Transistor:Collector-Emitter Volt (Vceo): 40V.Collector-Base Volt (Vcbo): 60V.Collector Current (Ic): 0.6A.hfe: 100-300 at 150mA.Power Dissip..

The transistor is a 3 terminal & 2 junction semiconductor device which is used for switching or amplifying purposes.Features of 2N2906 PNP General Purpose Transistor:Collector-Emitter Volt (Vceo): 40V.Collector-Base Volt (Vcbo): 60V.Collector Current (Ic): 0.6A.hfe: 100-300 at 150mA.Power Dissip..

The transistor is a 3 terminal & 2 junction semiconductor device which is used for switching or amplifying purposes.Features of 2N2905 PNP General Purpose Transistor:Collector-Emitter Volt (Vceo): 40V.Collector-Base Volt (Vcbo): 60V.Collector Current (Ic): 0.6A.hfe: 100-300 at 150mA.Power Dissip..

The transistor is a 3 terminal & 2 junction semiconductor device which is used for switching or amplifying purposes.Features of 2N2904 PNP General Purpose Transistor:Collector-Emitter Volt (Vceo): 40V.Collector Current (Ic): 0.6A.hfe: 40-120 at 150mA.Power Dissipation (Ptot): 600mW.Current-Gain-..

The transistor is a 3 terminal & 2 junction semiconductor device which is used for switching or amplifying purposes.Features of 2N2646 General Purpose Transistor:Emitter-Base Volt (Veb2): 30V.Emitter Current (Iem): 0.05A.Power Dissipation (Ptot): 300mW.Type: Unijunction.Applications of 2N2646 Ge..

The transistor is a 3 terminal & 2 junction semiconductor device which is used for switching or amplifying purposes.Features of 2N2484 General Purpose Transistor:Collector-Emitter Volt (Vceo): 60V.Collector-Base Volt (Vcbo): 60V.Collector Current (Ic): 0.2A.hfe: 250 @ 1mA.Power Dissipation (Ptot..

The transistor is a 3 terminal & 2 junction semiconductor device which is used for switching or amplifying purposes.Features of 2N2369 NPN Switching Transistor:Collector-Emitter Volt (Vceo): 15V.Collector-Base Volt (Vcbo): 40V.Collector Current (Ic): 0.2A.hfe: 40-120 @ 10mA.Power Dissipation (Pt..

The transistor is a 3 terminal & 2 junction semiconductor device which is used for switching or amplifying purposes.Features of 2N2222A/PN2222A NPN General Purpose Transistor:Collector-Emitter Volt (Vceo): 25V.Collector-Base Volt (Vcbo): 30V.Collector Current (Ic): 600mA.Power Dissipation (Ptot)..

The transistor is a 3 terminal & 2 junction semiconductor device which is used for switching or amplifying purposes.Features of 2N2222 NPN Bipolar Transistor TO-18 Metal Package:Collector-Emitter Volt (Vceo): 30V.Collector-Base Volt (Vcbo): 60V.Collector Current (Ic): 0.8A.Power Dissipation (Pto..

The transistor is a 3 terminal & 2 junction semiconductor device which is used for switching or amplifying purposes.Features of 2N2221 NPN High Speed Switch Transistor:Collector-Emitter Volt (Vceo): 30V.Collector-Base Volt (Vcbo): 60V.Collector Current (Ic): 0.8A.hfe: 40-120 @ 10mA.Power Dissipa..

The transistor is a 3 terminal & 2 junction semiconductor device which is used for switching or amplifying purposes.Features of 2N2219 NPN High Speed Switch Transistor:Collector-Emitter Volt (Vceo): 30V.Collector-Base Volt (Vcbo): 60V.Collector Current (Ic): 0.8A.hfe: 75 @ 10mA.Power Dissipation..

FeaturesCollector-Emitter Volt (Vceo): 30VCollector-Base Volt (Vcbo): 60VCollector Current (Ic): 0.8Ahfe: 40-120 @ 150mAPower Dissipation (Ptot): 800mWCurrent-Gain-Bandwidth (ftotal): 250MHzType: NPN..

FeaturesCollector-Emitter Volt (Vceo): 65VCollector-Base Volt (Vcbo): 120VCollector Current (Ic): 1.0Ahfe: 40-120 @ 150mAPower Dissipation (Ptot): 1000mWCurrent-Gain-Bandwidth (ftotal): -Type: NPN..

FeaturesCollector-Emitter Volt (Vceo): 80VCollector-Base Volt (Vcbo): 120VCollector Current (Ic): 0.5APower Dissipation (Ptot): 3000mWCurrent-Gain-Bandwidth (ftotal): 70MHzType: NPN..

FeaturesCollector-Emitter Volt (Vceo): 50VCollector-Base Volt (Vcbo): 75VCollector Current (Ic): 0.5Ahfe: 100-300 @ 150mAPower Dissipation (Ptot): 800mWCurrent-Gain-Bandwidth (ftotal): 70MHzType: NPN..

FeaturesCollector-Emitter Volt (Vceo): 50VCollector-Base Volt (Vcbo): 75VCollector Current (Ic): 0.5Ahfe: 40-120 @ 150mAPower Dissipation (Ptot): 800mWCurrent-Gain-Bandwidth (ftotal): 80MHzType: NPN..

This 2N 2369 is a NPN type switching transistor used in different switching the devices.Features of 2N 2369 NPN Transistor:VCBO (collector-base voltage open emitter): 40 V.VCEO (collector-emitter voltage open base): 15 V.IC collector current (DC) : 200 mA.Ptot total power dissipation at Tamb ≤ 25 °C..